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HGTG40N60C3
Data Sheet December 2001
75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49273.
Features
* 75A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . 100ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E C G
Ordering Information
PART NUMBER HGTG40N60C3 PACKAGE TO-247 PKG. NO. G40N60C3
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGTG40N60C3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG40N60C3 600 75 40 300 20 30 40A at 600V 291 2.33 100 -55 to 150 260 5 10 UNITS V A A A V V W W/oC mJ oC oC s s
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 12V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 3.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 15 3.1 VCE = 480V VCE = 600V 200 40 TYP 25 1.3 1.4 4.5 7.2 275 360 47 30 185 60 850 1.0 1.0 MAX 250 4.0 1.8 2.0 6.0 250 302 395 1.2 1.8 UNITS V V A mA V V V nA A A V nC nC ns ns ns ns mJ mJ mJ
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = IC110, VGE = 15V
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA
VGE(TH) IGES SSOA
IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 3, VGE = 15V, L = 400H
Gate to Emitter Plateau Voltage On-State Gate Charge
VGEP QG(ON)
IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 4)
td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF
IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3 L = 1mH Test Circuit (Figure 17)
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGTG40N60C3
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) Turn-On Energy (Note 3) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3 L = 1mH Test Circuit (Figure 17) MIN TYP 41 30 360 100 860 2.0 2.5 MAX 450 210 2.4 4 0.43 UNITS ns ns ns ns J mJ mJ
oC/W
Typical Performance Curves
80 ICE , DC COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0 25 PACKAGE LIMIT
Unless Otherwise Specified
ICE , COLLECTOR TO EMITTER CURRENT (A) VGE = 15V 225 200 175 150 125 100 75 50 25 0 0 100 200 300 400 500 600 700 VCE , COLLECTOR TO EMITTER VOLTAGE (V) TJ = 150oC, RG = 3, VGE = 15V, L = 100H
50
75
100
125
150
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
TJ = 150oC, RG = 3, L = 1mH, V CE = 480V 100 TC 75oC 75oC 110oC 110oC VGE 15V 10V 15V 10V
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
VCE = 360V, RG = 3, TJ = 125oC ISC
16
625
10
12
500
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.43oC/W, SEE NOTES 1 2 5 10 40 80 ICE , COLLECTOR TO EMITTER CURRENT (A)
8 tSC 4 10 11 12 13 14 VGE , GATE TO EMITTER VOLTAGE (V)
375
250 15
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
(c)2001 Fairchild Semiconductor Corporation
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTG40N60C3 Rev. B
ISC , PEAK SHORT CIRCUIT CURRENT (A)
fMAX , OPERATING FREQUENCY (kHz)
20
750
HGTG40N60C3 Typical Performance Curves
ICE , COLLECTOR TO EMITTER CURRENT (A) 300 250 200 TC = -55oC 150 TC = 25oC 100 50 0 0 1 2 3 4 5 6 7 VCE , COLLECTOR TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250s
Unless Otherwise Specified (Continued)
ICE , COLLECTOR TO EMITTER CURRENT (A)
300 250 200
DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250s
TC = 150oC
TC = -55oC 150 100 TC = 25oC 50 0 0 1 2 3
TC = 150oC
4
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
12 EON2 , TURN-ON ENERGY LOSS (mJ) 10 8 6
EOFF , TURN-OFF ENERGY LOSS (mJ)
RG = 3, L = 1mH, VCE = 480V TJ = 25oC, TJ = 150oC, VGE = 10V
6 RG = 3, L = 1mH, VCE = 480V 5 4 TJ = 150oC; VGE = 10V OR 15V 3 2 1 TJ = 25oC; VGE = 10V OR 15V 0 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A)
TJ = 25oC, TJ = 150oC, VGE = 15V 4 2 0 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
75 tdI , TURN-ON DELAY TIME (ns) 70 65 60 55 50 45 40 35 30 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC, TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 10V trI , RISE TIME (ns) RG = 3, L = 1mH, VCE = 480V
400 RG = 3, L = 1mH, VCE = 480V 350 TJ = 25oC, TJ = 150oC, VGE = 10V 300 250 200 150 100 50 0 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 25oC AND TJ = 150oC, VGE = 15V
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGTG40N60C3 Typical Performance Curves
400 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 3, L = 1mH, VCE = 480V 350 300 TJ = 150oC, VGE = 10V, VGE = 15V 250 200 150 TJ = 25oC, VGE = 10V, VGE = 15V 100 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) 20 0 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) tfI , FALL TIME (ns) 140 120 100 80 60 TJ = 25oC, VGE = 10V OR 15V 40
Unless Otherwise Specified (Continued)
160 RG = 3, L = 1mH, VCE = 480V TJ = 150oC, VGE = 10V, VGE = 15V
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE , COLLECTOR TO EMITTER CURRENT (A)
300 250 200 150 100 50 0 4
16 VGE, GATE TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s 14 12 10
IG(REF) = 1mA, RL = 7.5, TC = 25oC
TC = 150oC
VCE = 600V 8 6 VCE = 200V 4 2 0 0 50 100 150 200 250 300 VCE = 400V
TC = -55oC TC = 25oC 5 6 7 8 9 10 11
VGE , GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
15.0 FREQUENCY = 1MHz 12.5 C, CAPACITANCE (nF) 10.0 7.5 COES 5.0 2.5 0 CIES
CRES 0 5 10 15 20 25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGTG40N60C3 Typical Performance Curves
ZJC , NORMALIZED THERMAL RESPONSE
Unless Otherwise Specified (Continued)
100 0.5 0.2 0.1 10-1 0.05 0.02 0.01 10-2 SINGLE PULSE 10-4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 PD t2 10-1 100 t1
10-5
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
L = 1mH RHRP3060 VGE
90% 10% EON2 EOFF
RG = 3 + VDD = 480V
VCE 90% ICE 10% td(OFF)I tfI trI td(ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 18. SWITCHING TEST WAVEFORMS
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
HGTG40N60C3 Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM- TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60C3 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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